pnp bc160/10 ? bc160/16 pnp bc161/10 ? bc161/16 comset semiconductors 1/3 they are silicon planar epitaxial pnp trans istors mounted in to-39 metal package. they are particulary designed for audio amplifiers and switching applications up to 1a. npn complements are the bc140 ? bc141. compliance to rohs. absolute maximum ratings symbol ratings value unit bc160 40 -v cbo collector-base voltage i e = 0 bc161 60 v bc160 40 -v ceo collector-emitter voltage i b = 0 bc161 60 v bc160 -v ebo emitter-base voltage i c = 0 bc161 5 v bc160 -i c collector current bc161 1 a bc160 -i b base current bc161 0.1 a @ t case = < 45 3.7 p tot @ t amb = < 4 5 0.65 watts t j junction temperature 175 c t stg storage temperature range -55 to +175 c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction-case 35 k/ w r thj-amb thermal resistance, junction-ambient 200 k/ w g g e e n n e e r r a a l l p p u u r r p p o o s s e e t t r r a a n n s s i i s s t t o o r r s s
pnp bc160/10 ? bc160/16 pnp bc161/10 ? bc161/16 comset semiconductors 2 / 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i e = 0 ;v ces = 40 v bc160 i e = 0 ;v ces = 60 v bc161 - - 100 na v ces =40 v bc160 -i ces collector ? cutoff current i e = 0 ; v t amb = 150c v ces =60 v bc161 - - 100 a bc160 40 - - -v cb0 collector ? base breakdown voltage -i c = 100 a i e = 0 bc161 60 - - v bc160 40 - - -v ce0 (*) collector ? emitter breakdown voltage -i c = 10 ma i b = 0 bc161 60 - - v bc160 -v eb0 emitter ? base breakdown voltage -i e = 100 a i c = 0 bc161 5 - - v -i c = 100 ma , -i b = 10 ma - 0.1 -i c = 500 ma , -i b = 50 ma - 0.35 -v ce(sat) (*) collector-emitter saturation voltage -i c = 1 a, -i b = 100 ma - 0.6 1 -v be (*) base-emitter voltage -i c = 1 a , -v ce = 1v 1 1.7 v - 110 - gr 10 - 80 - -i c = 100 a , -v ce = 1 v gr 16 - 120 - 40 140 250 gr 10 63 100 160 -i c = 100 ma , -v ce = 1 v gr 16 100 160 250 - 26 - gr 10 - 20 - h fe (*) dc current gain -i c = 1 a , -v ce = 1 v gr 16 - 30 - - f t transition frequency -i c = 50 ma , -v ce = 10 v 50 - - mh z c cbo collector ? base capacitance i e = 0 ; -v cb = 20v f = 1 mh z - 15 30 pf t off turn-off times -i c =100 ma -i b1 =-i b2 =5 ma - - 650 ns t on turn-on times -i c =100 ma -i b1 =1 ma - - 500 ns (*) pulsed : pulse duration = 300s, duty cycle = 1%
pnp bc160/10 ? bc160/16 pnp bc161/10 ? bc161/16 comset semiconductors 3 / 3 mechanical data case to-39 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice. dimensions (mm) min typ max a 12.7 - - b - - 0.49 d - - 6.6 e - - 8.5 f - - 9.4 g 5.08 - - h - - 1.2 i - - 0.9 l 45 - - pin 1 : emitter pin 2 : base case : collector
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